Textile Solar Cells Based on SiC Microwires

Siegmund Greulich-Weber; M. Zöller; B. Friedel

doi:10.4028/www.scientific.net/MSF.615-617.239

Paper Titles

Investigation of Graphene Growth on 4H-SiC
p.223

Formation of Different Carbon Phases on SiC
p.227

Study of the Electrical Characteristics of the CNT/SiC Interface
p.231

Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
p.235

Textile Solar Cells Based on SiC Microwires
p.239

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
p.245

Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
p.251

Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
p.255

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
p.259

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Textile Solar Cells Based on SiC Microwires

Textile Solar Cells Based on SiC Microwires

Abstract:

The solar cell concept presented here is based on 3C-SiC nano- or microwires and conju¬gated polymers. Therefore the silicon carbide wires are fabricated by a sol-gel route including a car-bothermal reduction step, allowing growth with predetermined uniform diameters between 0.1 and 2μm and lengths up to several centimetres. The design of our photovoltaic device is therein based on a p-i-n structure, well known e.g. from silicon photovoltaics, involving an intrinsic semiconduc¬tor as the central photoactive layer, sandwiched between two complementary doped wide-bandgap semiconductors giving the driving force for charge separation. In our case the 3C-SiC microwires act as the electron acceptor and simultaneously as carrier material for all involved components of the photovoltaic element.