Study of the Electrical Characteristics of the CNT/SiC Interface

Micaela Castellino; Stefano Bianco; Denis Perrone; Simone Musso; Mauro Giorcelli; Gabriele Maccioni; Sergio Ferrero; Luciano Scaltrito; Alberto Tagliaferro

doi:10.4028/www.scientific.net/MSF.615-617.231

Paper Titles

AFM and Raman Studies of Graphene Exfoliated on SiC
p.215

Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)
p.219

Investigation of Graphene Growth on 4H-SiC
p.223

Formation of Different Carbon Phases on SiC
p.227

Study of the Electrical Characteristics of the CNT/SiC Interface
p.231

Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
p.235

Textile Solar Cells Based on SiC Microwires
p.239

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
p.245

Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
p.251

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Study of the Electrical Characteristics of the...

Study of the Electrical Characteristics of the CNT/SiC Interface

Abstract:

Vertically aligned multiwall carbon nanotubes were directly grown by means of thermal Chemical Vapor Deposition onto epitaxial and bulk double side polished 4H-SiC substrates. Their structure and morphology have been examined through Field Emission Scanning Electron Microscopy and Raman spectroscopy. The results have been compared with CNTs carpets grown in the same conditions on Si substrates. Preliminary analysis of their electrical properties has been performed using the four-point probe technique in order to evaluate their resistivity.