Study of the Electrical Characteristics of the CNT/SiC Interface

Abstract:

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Vertically aligned multiwall carbon nanotubes were directly grown by means of thermal Chemical Vapor Deposition onto epitaxial and bulk double side polished 4H-SiC substrates. Their structure and morphology have been examined through Field Emission Scanning Electron Microscopy and Raman spectroscopy. The results have been compared with CNTs carpets grown in the same conditions on Si substrates. Preliminary analysis of their electrical properties has been performed using the four-point probe technique in order to evaluate their resistivity.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

231-234

DOI:

10.4028/www.scientific.net/MSF.615-617.231

Citation:

M. Castellino et al., "Study of the Electrical Characteristics of the CNT/SiC Interface", Materials Science Forum, Vols. 615-617, pp. 231-234, 2009

Online since:

March 2009

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Price:

$35.00

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