AFM and Raman Studies of Graphene Exfoliated on SiC

Antoine Tiberj; Marta Martin; Nicolas Camara; P. Poncharal; T. Michel; J.L. Sauvajol; Philippe Godignon; Jean Camassel

doi:10.4028/www.scientific.net/MSF.615-617.215

Paper Titles

Growth of Graphene Layers on Silicon Carbide
p.199

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
p.203

TEM Investigations of Graphene on 4H-SiC(0001)
p.207

Graphene Formation on SiC Substrates
p.211

AFM and Raman Studies of Graphene Exfoliated on SiC
p.215

Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)
p.219

Investigation of Graphene Growth on 4H-SiC
p.223

Formation of Different Carbon Phases on SiC
p.227

Study of the Electrical Characteristics of the CNT/SiC Interface
p.231

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617AFM and Raman Studies of Graphene Exfoliated on...

AFM and Raman Studies of Graphene Exfoliated on SiC

Abstract:

We report an investigation of few layers graphene exfoliated on SiC. Using AFM and Raman spectroscopy, we find that the graphene thickness determined from the normalized intensity of Raman lines significantly depart from the one obtained using XPS.

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Silicon Carbide and Related Materials 2008

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Periodical:

Materials Science Forum (Volumes 615-617)

Pages:

215-218

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.615-617.215

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Online since:

March 2009

Authors:

Antoine Tiberj, Marta Martin, Nicolas Camara, P. Poncharal, T. Michel, J.L. Sauvajol, Philippe Godignon, Jean Camassel

Keywords:

Atomic Force Microscope (AFM), Graphen, RAMAN, Silicon Carbide (SiC)

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