Growth of Graphene Layers on Silicon Carbide

Wlodek Strupiński; Rafał Bożek; Jolanta Borysiuk; Kinga Kościewicz; Andrzej Wysmolek; Roman Stepniewski; Jacek M. Baranowski

doi:10.4028/www.scientific.net/MSF.615-617.199

Paper Titles

Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
p.181

Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
p.185

Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide
p.189

Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
p.193

Growth of Graphene Layers on Silicon Carbide
p.199

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
p.203

TEM Investigations of Graphene on 4H-SiC(0001)
p.207

Graphene Formation on SiC Substrates
p.211

AFM and Raman Studies of Graphene Exfoliated on SiC
p.215

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Growth of Graphene Layers on Silicon Carbide

Growth of Graphene Layers on Silicon Carbide

Abstract:

The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the mixture (H2-C3H8) was performed prior to growth at 1600oC temperature under 100 mbar. Systematic studies of the influence of the decomposition temperature and time, substrates roughness, etching of the substrates, heating rate, SiC dezorientation and other process parameters on the graphene thickness and quality have been conducted. Morphology and atomic scale structure of graphene was examined by Scanning Tunnelling Microscopy (STM), Transmission Electron Microscopy (TEM) and Raman scattering methods.