Growth of Graphene Layers on Silicon Carbide

Abstract:

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The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the mixture (H2-C3H8) was performed prior to growth at 1600oC temperature under 100 mbar. Systematic studies of the influence of the decomposition temperature and time, substrates roughness, etching of the substrates, heating rate, SiC dezorientation and other process parameters on the graphene thickness and quality have been conducted. Morphology and atomic scale structure of graphene was examined by Scanning Tunnelling Microscopy (STM), Transmission Electron Microscopy (TEM) and Raman scattering methods.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

199-202

DOI:

10.4028/www.scientific.net/MSF.615-617.199

Citation:

W. Strupiński et al., "Growth of Graphene Layers on Silicon Carbide", Materials Science Forum, Vols. 615-617, pp. 199-202, 2009

Online since:

March 2009

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$35.00

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