Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase

Olivier Kim-Hak; Gabriel Ferro; Jacques Dazord; Patrick Chaudouët; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.615-617.193

Paper Titles

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
p.177

Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
p.181

Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
p.185

Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide
p.189

Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
p.193

Growth of Graphene Layers on Silicon Carbide
p.199

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
p.203

TEM Investigations of Graphene on 4H-SiC(0001)
p.207

Graphene Formation on SiC Substrates
p.211

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Effects of Temperature and Heating Rate on the...

Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase

Abstract:

Like on 6H-SiC substrates, 3C-SiC islands precipitation was found to be the initial stage of the VLS growth of 3C-SiC layers on 4H-SiC surfaces. This precipitation happens between 1100 and 1200°C with a heating rate of 2.8°C.s-1, without addition of propane. The islands size increases in a similar manner whether the final temperature increases (for a given heating rate) or the heating rate decreases (for a given final temperature). This enlargement can give rise to a complete cubic layer for the highest temperatures or the slowest heating rates. It is suggested that the carbon atoms involved in the enlargement process (after the nucleation) come from the graphite crucible.