Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

Abstract:

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We report a comparative investigation of few layers graphene grown on 6H, 4H and 3C-SiC substrates. We show that the size of the graphitic domains depends more on the <0001> SiC surface orientation than the polytypism.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

203-206

DOI:

10.4028/www.scientific.net/MSF.615-617.203

Citation:

N. Camara et al., "Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 203-206, 2009

Online since:

March 2009

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Price:

$35.00

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