Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

Nicolas Camara; Jean Roch Huntzinger; Antoine Tiberj; G. Rius; B. Jouault; Francesco Pérez-Murano; Narcis Mestres; Philippe Godignon; Jean Camassel

doi:10.4028/www.scientific.net/MSF.615-617.203

Paper Titles

Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
p.185

Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide
p.189

Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
p.193

Growth of Graphene Layers on Silicon Carbide
p.199

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
p.203

TEM Investigations of Graphene on 4H-SiC(0001)
p.207

Graphene Formation on SiC Substrates
p.211

AFM and Raman Studies of Graphene Exfoliated on SiC
p.215

Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)
p.219

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Growth of Few Graphene Layers on 6H, 4H and 3C-SiC...

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

Abstract:

We report a comparative investigation of few layers graphene grown on 6H, 4H and 3C-SiC substrates. We show that the size of the graphitic domains depends more on the <0001> SiC surface orientation than the polytypism.

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Silicon Carbide and Related Materials 2008

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Periodical:

Materials Science Forum (Volumes 615-617)

Pages:

203-206

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.615-617.203

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Online since:

March 2009

Authors:

Nicolas Camara, Jean Roch Huntzinger, Antoine Tiberj, G. Rius, B. Jouault, Francesco Pérez-Murano, Narcis Mestres, Philippe Godignon, Jean Camassel

Keywords:

3C-SiC, 4H-SiC, 6H-SiC, Atomic Force Microscope (AFM), Epitaxial Graphene, Raman Spectroscopy

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