Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)

Christian Riedl; Ulrich Starke

doi:10.4028/www.scientific.net/MSF.615-617.219

Paper Titles

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
p.203

TEM Investigations of Graphene on 4H-SiC(0001)
p.207

Graphene Formation on SiC Substrates
p.211

AFM and Raman Studies of Graphene Exfoliated on SiC
p.215

Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)
p.219

Investigation of Graphene Growth on 4H-SiC
p.223

Formation of Different Carbon Phases on SiC
p.227

Study of the Electrical Characteristics of the CNT/SiC Interface
p.231

Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
p.235

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Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)

Abstract:

The structural and electronic properties of epitaxial graphene on SiC(0001) are investigated by low energy electron diffraction (LEED) and angle resolved ultraviolet photoelectron spectroscopy (ARUPS). Fingerprints in the spot intensity spectra in LEED allow for the exact determination of the number of layers for the first three graphene layers after being correlated with the electronic bandstructure obtained from ARUPS using He II excitation. Our analysis includes the consideration of samples with different doping levels. A possible influence of the polytype 4H- or 6H-SiC is discussed. LEED by itself turns out to be an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001).