Formation of Different Carbon Phases on SiC

Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.615-617.227

Paper Titles

Graphene Formation on SiC Substrates
p.211

AFM and Raman Studies of Graphene Exfoliated on SiC
p.215

Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)
p.219

Investigation of Graphene Growth on 4H-SiC
p.223

Formation of Different Carbon Phases on SiC
p.227

Study of the Electrical Characteristics of the CNT/SiC Interface
p.231

Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
p.235

Textile Solar Cells Based on SiC Microwires
p.239

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
p.245

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Formation of Different Carbon Phases on SiC

Formation of Different Carbon Phases on SiC

Abstract:

Carbon is able to crystallise in different allotrope modifications. They mainly differ in the dominating bindings formed in dependence on the hybridization sp, sp2 and sp3 of the carbon atoms. The present work demonstrates the formation of two different forms of car¬bon allotropes by heating both polar surfaces of on axis 6H-SiC(0001) and 6H-SiC(000 ) crystals to temperatures above 1600°C. In consequence of the structural evolution graphite-like (sp2-hybridised) and carbine-like (sp-hybridised) allotropic carbon modifications were obtained.