Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates

Maya Marinova; Ioannis Tsiaousis; N. Frangis; Efstathios K. Polychroniadis; Olivier Kim-Hak; Jean Lorenzzi; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.615-617.185

Paper Titles

Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
p.169

Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls
p.173

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
p.177

Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
p.181

Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
p.185

Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide
p.189

Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
p.193

Growth of Graphene Layers on Silicon Carbide
p.199

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
p.203

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Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates

Abstract:

The use of Ge very rich Si-Ge liquid phase during the heteroepitaxial growth of 3C-SiC on Si-face, on-axis 6H-SiC(0001) substrate by vapour-liquid-solid mechanism leads to the formation of Ge based precipitates inside the 3C layer. These Ge based features are investigated by TEM and atomic models of the Ge clustering are proposed by means of high resolution TEM image simulation. Conventional TEM shows only a few small precipitates sparsely distributed near the interface, as well as dislocations and stacking faults starting from the interface in an almost regular manner. High resolution TEM shows fine structural imperfections in the form of Guinier Preston zones also near the interface. It is concluded that the high Ge content creates an enlargement of the SiC lattice leading to a misfit with the substrate. This could be the driving force for the formation of all the observed features.