Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls

Boris M. Sinelnikov; Vitaly A. Tarala; Ivan S. Mitchenko

doi:10.4028/www.scientific.net/MSF.615-617.173

Paper Titles

Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer
p.157

Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
p.161

P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
p.165

Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
p.169

Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls
p.173

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
p.177

Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
p.181

Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
p.185

Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide
p.189

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Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls

Abstract:

The possibility of silicon carbide films production out of organosilicon chlorine-containing monomers is under analysis in this research. Silicon carbide films samples were produced by chemical deposition method out of gas phase in reactor with “cold walls”, in the conditions of low pressure. The influence of monomer type, substrate temperature on crystalline SiC films composition is also under consideration. The results of infrared spectroscopy, Raman scattering spectrometry and x-ray phase analysis are presented.