P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Sergey P. Lebedev; Alexander A. Lebedev; Pavel L. Abramov; Elena V. Bogdanova; D.K. Nel'son; Gagik A. Oganesyan; Alla S. Tregubova; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.615-617.177

Paper Titles

Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
p.161

P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
p.165

Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
p.169

Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls
p.173

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
p.177

Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
p.181

Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
p.185

Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide
p.189

Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
p.193

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P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Abstract:

Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence (PL) spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ~EV + 0.25 eV and at EV + 0.06-0.07 eV exist in the samples studied. A conclusion is made that layers of this kind can be used as p-emitters in 3C-SiC devices.