P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence (PL) spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ~EV + 0.25 eV and at EV + 0.06-0.07 eV exist in the samples studied. A conclusion is made that layers of this kind can be used as p-emitters in 3C-SiC devices.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
S. P. Lebedev et al., "P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 177-180, 2009