P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Abstract:

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Highly doped p-3C-SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence (PL) spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ~EV + 0.25 eV and at EV + 0.06-0.07 eV exist in the samples studied. A conclusion is made that layers of this kind can be used as p-emitters in 3C-SiC devices.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

177-180

DOI:

10.4028/www.scientific.net/MSF.615-617.177

Citation:

S. P. Lebedev et al., "P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 177-180, 2009

Online since:

March 2009

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Price:

$35.00

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