Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

Hideki Shimizu; Akira Kato

doi:10.4028/www.scientific.net/MSF.615-617.161

Paper Titles

High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)
p.145

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
p.149

A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios
p.153

Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer
p.157

Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
p.161

P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
p.165

Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
p.169

Silicon Carbide Crystalline Films Synthesis out of Organosilicon Monomers Vapors in Reactor with Cold Walls
p.173

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates
p.177

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Low Temperature Growth of 3C-SiC Film on Si (111)...

Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD

Abstract:

In order to demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystallinity of the films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 850 °C. Oriented polycrystalline 3C-SiC film grew under the C/Si of 3 – 5 with a-C. It is suggested that etching effects of growing surface by hydrogen radicals generated from C3H8 decomposition is lowered by lowering the substrate temperature. The crystallinity has been investigated by reflection electron diffraction (RED) and a X-ray diffraction (XRD). The thickness and the surface roughness of the films were investigated by an ellipsometric measurement.