Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si

Andrea Severino; Ruggero Anzalone; Corrado Bongiorno; M. Italia; Giuseppe Abbondanza; Massimo Camarda; L.M.S. Perdicaro; Giuseppe Condorelli; Marco Mauceri; Francesco La Via

doi:10.4028/www.scientific.net/MSF.615-617.149

Paper Titles

On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
p.133

Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
p.137

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
p.141

High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)
p.145

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
p.149

A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios
p.153

Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer
p.157

Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
p.161

P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
p.165

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Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si

Abstract:

The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3° to 6° along <110> and <11 >. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111)Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.