Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates

Kazuhiko Kusunoki; Kazuhito Kamei; Nobuyoshi Yashiro; Ryo Hattori

doi:10.4028/www.scientific.net/MSF.615-617.137

Paper Titles

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
p.121

Inverted Pyramid Defects in 4H-SiC Epilayers
p.125

PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer
p.129

On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
p.133

Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
p.137

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
p.141

High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)
p.145

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
p.149

A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios
p.153

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis...

Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates

Abstract:

We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype controllability of the epilayer significantly depends on the growth process conditions. By optimizing them, polytype mixing in the epilayers can be completely suppressed. It is shown that the density of basal plane dislocations in the epilayers is much less than in the substrates due to on-axis growth. SIMS analysis showed that the concentrations of trace impurity elements (B,Al,Ti,V,Cr,Fe,Ni,P) in the epilayers are under lower detection limit. The only impurity is nitrogen resulting in an n-type layer. Carrier concentrations Nd-Na ranging from high 1016 to low 1017cm-3 are achievable.