On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications

Jawad ul Hassan; Peder Bergman; Anne Henry; Pierre Brosselard; Philippe Godignon; Erik Janzén

doi:10.4028/www.scientific.net/MSF.615-617.133

Paper Titles

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
p.117

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
p.121

Inverted Pyramid Defects in 4H-SiC Epilayers
p.125

PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer
p.129

On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
p.133

Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
p.137

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
p.141

High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)
p.145

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
p.149

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for...

On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications

Abstract:

Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates. Special attention was paid to the surface preparation before starting the growth. Si-face polished surfaces were studied after etching under C-rich, Si-rich and under pure hydrogen ambient conditions. In-situ surface preparation, starting growth parameters and growth temperature are found to play a vital role to maintain the polytype stability in the epilayer. High quality epilayers with 100% 4H-SiC were obtained on full 2” wafer. Complete PiN structure was grown and more than 70% of the diodes showed a stable behavior and the forward voltage drift was less than 0.1 V. Also, a comparison of the electroluminescence images of diodes before and after heavy injection of 125 A/cm2 for 30 min did not show any sign of stacking fault formation in the device active region.