Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

Massimo Camarda; Antonino La Magna; Andrea Severino; Francesco La Via

doi:10.4028/www.scientific.net/MSF.615-617.117

Paper Titles

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
p.101

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
p.105

The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
p.109

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
p.113

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
p.117

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
p.121

Inverted Pyramid Defects in 4H-SiC Epilayers
p.125

PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer
p.129

On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
p.133

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Extended Study of the Step-Bunching Mechanism...

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

Abstract:

We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic and hexagonal Silicon Carbide polytypes. For this analysis we use: results from super-lattice Kinetic Monte Carlo simulations, atomic force microscope surface analysis and literature data. We show that only hexagonal polytypes with misorientation cut toward the <11-20> direction suffer “intrinsically” the step bunching phenomena (i.e. it are present, independently on the growth conditions) whereas cubic polytypes and hexagonal ones with misorientation cut toward the <10-10> direction do not.