Paper Title:
Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
  Abstract

We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic and hexagonal Silicon Carbide polytypes. For this analysis we use: results from super-lattice Kinetic Monte Carlo simulations, atomic force microscope surface analysis and literature data. We show that only hexagonal polytypes with misorientation cut toward the <11-20> direction suffer “intrinsically” the step bunching phenomena (i.e. it are present, independently on the growth conditions) whereas cubic polytypes and hexagonal ones with misorientation cut toward the <10-10> direction do not.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
117-120
DOI
10.4028/www.scientific.net/MSF.615-617.117
Citation
M. Camarda, A. La Magna, A. Severino, F. La Via, "Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC", Materials Science Forum, Vols. 615-617, pp. 117-120, 2009
Online since
March 2009
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Price
$35.00
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