Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

Abstract:

Article Preview

We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic and hexagonal Silicon Carbide polytypes. For this analysis we use: results from super-lattice Kinetic Monte Carlo simulations, atomic force microscope surface analysis and literature data. We show that only hexagonal polytypes with misorientation cut toward the <11-20> direction suffer “intrinsically” the step bunching phenomena (i.e. it are present, independently on the growth conditions) whereas cubic polytypes and hexagonal ones with misorientation cut toward the <10-10> direction do not.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

117-120

DOI:

10.4028/www.scientific.net/MSF.615-617.117

Citation:

M. Camarda et al., "Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC", Materials Science Forum, Vols. 615-617, pp. 117-120, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.