The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality

Ning Zhang; Yi Chen; Edward Sanchez; David R. Black; Michael Dudley

doi:10.4028/www.scientific.net/MSF.615-617.109

Paper Titles

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
p.93

Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth
p.97

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
p.101

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
p.105

The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
p.109

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
p.113

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
p.117

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
p.121

Inverted Pyramid Defects in 4H-SiC Epilayers
p.125

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The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality

Abstract:

The influence of substrate surface scratches on the quality of CVD grown 4H-SiC homo-epitaxial layers has been studied using a combination of post-growth Monochromatic Synchrotron X-ray Topography (MSXT) and KOH etching. MSXT observations suggest that the scratches on the substrate surface act as dislocation nucleation centers during the growth. When the scratch is along the off-cut direction, only TED-TED pairs are generated. As the inclination of the scratch to the off-cut direction increases, an increasing number of TED-BPD pairs are generated. A model is presented for a possible mechanism for the nucleation of dislocations at scratches.