Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
S. Leone et al., "Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition", Materials Science Forum, Vols. 615-617, pp. 93-96, 2009