Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Stefano Leone; Henrik Pedersen; Anne Henry; Shailaja P. Rao; Olof Kordina; Erik Janzén

doi:10.4028/www.scientific.net/MSF.615-617.93

Paper Titles

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV
p.77

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
p.81

P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
p.85

Chloride-Based SiC Epitaxial Growth
p.89

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
p.93

Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth
p.97

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
p.101

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
p.105

The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
p.109

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Growth of Thick 4H-SiC Epitaxial Layers on On-Axis...

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Abstract:

Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.