Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth
Chlorinated silicon precursor SiCl4 was investigated as a source of additional chlorine instead of or in combination with HCl during the low temperature (13000C) halo-carbon epitaxial growth. No Si cluster cloud was visible inside the hot-wall susceptor indicating negligible homogeneous gas-phase nucleation. The growth rate was significantly enhanced compared to the SiH4-case, but was relatively close to the SiH4+HCl case. Similar to the SiH4+HCl growth, the increase of the growth rate caused by suppressed cluster formation was less significant than expected. The depletion of the growth species by vigorous polycrystalline deposition upstream of the hot zone, which was earlier reported for the SiH4+HCl growth, was also significant in the SiCl4-based growth. Closer to the growth zone, carbon species also get incorporated in the polycrystalline deposits.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
S. P. Kotamraju et al., "Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth", Materials Science Forum, Vols. 615-617, pp. 97-100, 2009