Low-Temperature Homoepitaxial Growth with SiCl4 Precursor Compared to HCl Assisted SiH4-Based Growth

Siva Prasad Kotamraju; Galyna Melnychuk; Yaroslav Koshka

doi:10.4028/www.scientific.net/MSF.615-617.97

Paper Titles

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
p.81

P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
p.85

Chloride-Based SiC Epitaxial Growth
p.89

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
p.93

Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth
p.97

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
p.101

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
p.105

The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
p.109

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
p.113

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Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth

Abstract:

Chlorinated silicon precursor SiCl4 was investigated as a source of additional chlorine instead of or in combination with HCl during the low temperature (13000C) halo-carbon epitaxial growth. No Si cluster cloud was visible inside the hot-wall susceptor indicating negligible homogeneous gas-phase nucleation. The growth rate was significantly enhanced compared to the SiH4-case, but was relatively close to the SiH4+HCl case. Similar to the SiH4+HCl growth, the increase of the growth rate caused by suppressed cluster formation was less significant than expected. The depletion of the growth species by vigorous polycrystalline deposition upstream of the hot zone, which was earlier reported for the SiH4+HCl growth, was also significant in the SiCl4-based growth. Closer to the growth zone, carbon species also get incorporated in the polycrystalline deposits.