Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
K. Kojima et al., "Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth", Materials Science Forum, Vols. 615-617, pp. 113-116, 2009