Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC

Rachael L. Myers-Ward; Brenda L. VanMil; Robert E. Stahlbush; S.L. Katz; J.M. McCrate; S.A. Kitt; Charles R. Eddy; D. Kurt Gaskill

doi:10.4028/www.scientific.net/MSF.615-617.105

Paper Titles

Chloride-Based SiC Epitaxial Growth
p.89

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
p.93

Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth
p.97

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
p.101

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
p.105

The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
p.109

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
p.113

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
p.117

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
p.121

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Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC

Abstract:

Epitaxial layers were grown on 4° off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in lower basal plane dislocation (BPD) densities. The dependence of BPD reduction on growth conditions was investigated using ultraviolet photoluminescence (UVPL) imaging. With this method, it was found that the dislocations were converting to threading edge dislocations throughout the thickness of the film. A high (≥ 97%) conversion efficiency was found for all films grown with this orientation. A conversion of 100% was achieved for several films without pre-growth treatments or growth interrupts.