Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers

James D. Oliver; Brian H. Ponczak; Rinku P. Parikh; Raymond A. Adomaitis

doi:10.4028/www.scientific.net/MSF.615-617.101

Paper Titles

P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
p.85

Chloride-Based SiC Epitaxial Growth
p.89

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
p.93

Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth
p.97

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
p.101

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
p.105

The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
p.109

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
p.113

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
p.117

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Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers

Abstract:

A method to improve the uniformity of epitaxial wafers grown in planetary rotation reactors through analysis of intentionally stalled wafer measurements is described. A set of basis functions that are completely uniform when rotated in the reactor environment are described and used to construct a nearest uniformity producing profile (NUPP). The methodology for use of stalled wafer profiles and comparison to the NUUP allows easy identification of the changes in process parameters necessary for more uniform epitaxial growth. Although described here as applied to SiC epitaxial growth, this method is applicable to all planetary rotation reactors which are utilized for SiC and III-V semiconductor epitaxial growth.