Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers

Abstract:

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A method to improve the uniformity of epitaxial wafers grown in planetary rotation reactors through analysis of intentionally stalled wafer measurements is described. A set of basis functions that are completely uniform when rotated in the reactor environment are described and used to construct a nearest uniformity producing profile (NUPP). The methodology for use of stalled wafer profiles and comparison to the NUUP allows easy identification of the changes in process parameters necessary for more uniform epitaxial growth. Although described here as applied to SiC epitaxial growth, this method is applicable to all planetary rotation reactors which are utilized for SiC and III-V semiconductor epitaxial growth.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

101-104

DOI:

10.4028/www.scientific.net/MSF.615-617.101

Citation:

J. D. Oliver et al., "Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers", Materials Science Forum, Vols. 615-617, pp. 101-104, 2009

Online since:

March 2009

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Price:

$35.00

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