Chloride-Based SiC Epitaxial Growth

Henrik Pedersen; Stefano Leone; Anne Henry; Franziska Christine Beyer; A. Lundskog; Erik Janzén

doi:10.4028/www.scientific.net/MSF.615-617.89

Paper Titles

Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
p.73

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV
p.77

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
p.81

P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
p.85

Chloride-Based SiC Epitaxial Growth
p.89

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
p.93

Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth
p.97

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
p.101

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
p.105

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Chloride-Based SiC Epitaxial Growth

Chloride-Based SiC Epitaxial Growth

Abstract:

Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors or/and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the Cl/Si-ratio has on the growth have been studied. MTS is showed to be the most efficient precursor; the growth can be hindered by to much chlorine in the gas mixture. The Cl/Si-ratio is also found to be a process parameter that affects the amount of incorporated nitrogen in the epilayers.