Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV

Bernd Thomas; Christian Hecht; Birgit Kallinger

doi:10.4028/www.scientific.net/MSF.615-617.77

Paper Titles

Thick Epitaxial Layers Growth by Chlorine Addition
p.55

Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
p.61

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
p.67

Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
p.73

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV
p.77

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
p.81

P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
p.85

Chloride-Based SiC Epitaxial Growth
p.89

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
p.93

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Large-Area Homoepitaxial Growth of Low-Doped Thick...

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV

Abstract:

In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a commercially available hot-wall multi-wafer CVD system. For the first time we show results of a low-doped full-loaded 73” run on 4° off-oriented substrates with a layer thickness of more than 70 µm. The target doping concentration of 1.2×1015 cm-3 is suitable for blocking voltages > 6 kV. Results on doping, thickness and wafer-to-wafer homogeneities are shown. The surface quality of the grown layers was characterized by AFM. The density of different types of dislocations was determined by Defect Selective Etching.