Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV

Abstract:

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In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a commercially available hot-wall multi-wafer CVD system. For the first time we show results of a low-doped full-loaded 73” run on 4° off-oriented substrates with a layer thickness of more than 70 µm. The target doping concentration of 1.2×1015 cm-3 is suitable for blocking voltages > 6 kV. Results on doping, thickness and wafer-to-wafer homogeneities are shown. The surface quality of the grown layers was characterized by AFM. The density of different types of dislocations was determined by Defect Selective Etching.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

77-80

DOI:

10.4028/www.scientific.net/MSF.615-617.77

Citation:

B. Thomas et al., "Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV", Materials Science Forum, Vols. 615-617, pp. 77-80, 2009

Online since:

March 2009

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Price:

$35.00

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