P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

Abstract:

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The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

85-88

DOI:

10.4028/www.scientific.net/MSF.615-617.85

Citation:

P. Hens et al., "P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates", Materials Science Forum, Vols. 615-617, pp. 85-88, 2009

Online since:

March 2009

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Price:

$35.00

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