P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
P. Hens et al., "P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates", Materials Science Forum, Vols. 615-617, pp. 85-88, 2009