P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

Philip Hens; Mikael Syväjärvi; Felix Oehlschläger; Peter J. Wellmann; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.615-617.85

Paper Titles

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
p.67

Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
p.73

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV
p.77

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
p.81

P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
p.85

Chloride-Based SiC Epitaxial Growth
p.89

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition
p.93

Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth
p.97

Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers
p.101

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617P- and n-Type Doping in SiC Sublimation Epitaxy...

P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

Abstract:

The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.