Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

Hrishikesh Das; Galyna Melnychuk; Yaroslav Koshka

doi:10.4028/www.scientific.net/MSF.615-617.121

Paper Titles

Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC
p.105

The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
p.109

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
p.113

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
p.117

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
p.121

Inverted Pyramid Defects in 4H-SiC Epilayers
p.125

PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer
p.129

On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
p.133

Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
p.137

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Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

Abstract:

Dislocations were investigated in the halo-carbon low-temperature epitaxial growth and low-temperature selective epitaxial growth (LTSEG) conducted at 13000C. The origin of triangular defects was investigated in low-temperature epilayers grown at higher growth rates with HCl addition. Due to the conversion of substrates’ basal plane dislocations (BPD) into threading dislocations, the concentration of BPDs was about an order of magnitude lower than the concentration of threading dislocations at moderate growth rates. An additional order of magnitude conversion of BPDs into threading dislocations was observed at higher grow rates achieved with HCl addition. In LTSEG epilayers, dislocation concentration away from the mesa walls was comparable to the blanket (i.e., regular non-selective) growth. High concentrations of BPDs were found only at mesa edges located on the “upstream” side with respect to the step-flow direction. No substrate defects could be traced to the triangular defects. Instead, the disturbances causing the triangular defect generation are introduced during the epitaxial process.