Inverted Pyramid Defects in 4H-SiC Epilayers
In this work we identified the nucleation sites of inverted pyramid defects in 4H-SiC epilayers using AFM and KOH etching and proposed a mechanism for its formation. Partial dislocations, bounding the stacking faults, mostly aligned along the <11-20> directions, were found at the base of the inverted pyramid defects. It is shown that the basal plane dislocations, serve as nucleation centers for stacking faults, and eventually the formation of inverted pyramid defects. A geometrical model is formulated to explain the formation mechanism of inverted pyramid defects.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
A. Shrivastava et al., "Inverted Pyramid Defects in 4H-SiC Epilayers", Materials Science Forum, Vols. 615-617, pp. 125-128, 2009