LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

Ryo Hattori; Kazuhito Kamei; Kazuhiko Kusunoki; Nobuyoshi Yashiro; S. Shimosaki

doi:10.4028/www.scientific.net/MSF.615-617.141

Paper Titles

Inverted Pyramid Defects in 4H-SiC Epilayers
p.125

PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer
p.129

On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
p.133

Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
p.137

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
p.141

High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)
p.145

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
p.149

A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios
p.153

Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer
p.157

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617LPE Growth of Low Doped n-Type 4H-SiC Layer on...

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

Abstract:

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.