LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

Abstract:

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LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

141-144

DOI:

10.4028/www.scientific.net/MSF.615-617.141

Citation:

R. Hattori et al., "LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application", Materials Science Forum, Vols. 615-617, pp. 141-144, 2009

Online since:

March 2009

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Price:

$35.00

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