LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
R. Hattori et al., "LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application", Materials Science Forum, Vols. 615-617, pp. 141-144, 2009