A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios

Giovanni Attolini; Bernard Enrico Watts; Matteo Bosi; Francesca Rossi; Ferenc Riesz

doi:10.4028/www.scientific.net/MSF.615-617.153

Paper Titles

Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
p.137

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
p.141

High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)
p.145

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
p.149

A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios
p.153

Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer
p.157

Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD
p.161

P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
p.165

Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
p.169

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617A Comparative Study of the Morphology of 3C-SiC...

A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios

Abstract:

A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined of observations using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) indicates that the C:Si ratio is critical in determining the grain size and at values of C:Si close to 1 texturing and faceting become evident. Makyoh Topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.