A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios

Abstract:

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A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined of observations using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) indicates that the C:Si ratio is critical in determining the grain size and at values of C:Si close to 1 texturing and faceting become evident. Makyoh Topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

153-156

DOI:

10.4028/www.scientific.net/MSF.615-617.153

Citation:

G. Attolini et al., "A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios", Materials Science Forum, Vols. 615-617, pp. 153-156, 2009

Online since:

March 2009

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$35.00

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