Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/www.scientific.net/MSF.615-617

Paper Title Page

Authors: Gil Chung, Mark J. Loboda, M.J. Marninella, D.K. Schroder, Tamara Isaacs-Smith, John R. Williams

Abstract: The pulsed MOS-C (Metal Oxide Semiconductor-Capacitor) technique was used to measure generation lifetimes in 4H-SiC epitaxial wafers. The...

283
Authors: Gil Chung, Mark J. Loboda, Mike F. MacMillan, Jian Wei Wan

Abstract: Effective recombination lifetimes of 4H-SiC PiN epitaxy wafers are measured by -PCD (microwave photoconductive decay) system at wafer...

287
Authors: Amitesh Shrivastava, Paul B. Klein, E.R. Glaser, Joshua D. Caldwell, A.V. Bolotnikov, Tangali S. Sudarshan

Abstract: In this work we report the measurement of minority carrier lifetimes using the time resolved photoluminescence technique. It was found that...

291
Authors: Laurent Ottaviani, Olivier Palais, Damien Barakel, Marcel Pasquinelli

Abstract: We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity...

295
Authors: Corey J. Cochrane, Patrick M. Lenahan, Aivars J. Lelis

Abstract: We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

299
Authors: Georgios Manolis, Kęstutis Jarašiūnas, Irina G. Galben-Sandulache, Didier Chaussende

Abstract: We applied a picosecond dynamic grating technique for studies of nonequilibrium carrier dynamics in a 0.8 mm thick bulk 3C-SiC crystal grown...

303
Authors: Vladimir Ilich Sankin, Pavel P. Shkrebiy, Alla A. Lepneva, Andrey G. Ostroumov, Rositza Yakimova

Abstract: In materials with a small degree of ionicity ranging 10-15%, such as in SiC, carrier scattering on polar optical potential is possible....

307
Authors: W.S. Loh, J.P.R. David, B.K. Ng, Stanislav I. Soloviev, Peter M. Sandvik, J.S. Ng, C. Mark Johnson

Abstract: Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n-...

311
Authors: Hiroaki Sato, Ichiro Shoji, Jun Suda, Takashi Kondo

Abstract: Second-order nonlinear-optical coefficients of 4H and 6H-SiC have been measured with the wedge technique. Using high-quality (11-20) samples...

315
Authors: Patrik Ščajev, Arunas Kadys, Kęstutis Jarašiūnas

Abstract: We applied a picosecond dynamic grating technique for investigation of thermal diffusivity, sound velocity, thermo-optic and photoelastic...

319

Showing 71 to 80 of 247 Paper Titles