Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Andreas Gällström, Björn Magnusson, Erik Janzén

Abstract: The photoluminescence (PL) from the I 1 centre is observed in p-, n-type as well as in compensated samples, using above band gap excitation....

Authors: John W. Steeds, N. Peng, W. Sullivan

Abstract: 1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been...

Authors: John W. Steeds

Abstract: An attempt is made, in the light of recent developments in the identification of intrinsic defects in 4H SiC, to account for differences...

Authors: Vito Raineri, Filippo Giannazzo, Fabrizio Roccaforte

Abstract: We describe the potential use of scanning probe microscopy (SPM) to image at nanoscale the charge transport in conductive layers, through...

Authors: Swapna G. Sunkari, Hrishikesh Das, Carl Hoff, Yaroslav Koshka, Janna R. B. Casady, Jeff B. Casady

Abstract: 4H Silicon Carbide (4H-SiC) has a great potential for low-loss power devices due to its superior electrical properties. However, the...

Authors: Shaweta Khanna, Arti Noor, Man Singh Tyagi, Sonnathi Neeleshwar

Abstract: Available data on Schottky barrier heights on silicon and carbon rich faces of 4H-SiC have been carefully analyzed to investigate the...

Authors: Pavel A. Ivanov, Alexander S. Potapov, Tat'yana P. Samsonova

Abstract: Forward current-voltage characteristics of non-ideal Ti / 4H-SiC Schottky barriers with ideality factor n = 1.1 - 1.2 have been analyzed....

Authors: Yoosuf N. Picard, Christopher Locke, Christopher L. Frewin, Mark E. Twigg, Stephen E. Saddow

Abstract: Electron channeling contrast imaging (ECCI) has been utilized to evaluate the surface morphology and crystalline quality of 3C-SiC films...

Authors: Sergey Y. Davydov, Alexander A. Lebedev

Abstract: The three-layer heterostructure formed by the two domains of the cubical 3C-SiC polytype and hexagonal NH-SiC (N = 4, 6, 8) layer is...

Authors: Owen J. Guy, Amador Pérez-Tomás, Michael R. Jennings, Michal Lodzinski, A. Castaing, Philip A. Mawby, James A. Covington, S.P. Wilks, R. Hammond, D. Connolly, S. Jones, J. Hopkins, T. Wilby, N. Rimmer, K. Baker, S. Conway, S. Evans

Abstract: This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low...


Showing 101 to 110 of 247 Paper Titles