Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/www.scientific.net/MSF.615-617

Paper Title Page

Authors: Andreas Gällström, Björn Magnusson, Erik Janzén

Abstract: The photoluminescence (PL) from the I 1 centre is observed in p-, n-type as well as in compensated samples, using above band gap excitation....

405
Authors: John W. Steeds, N. Peng, W. Sullivan

Abstract: 1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been...

409
Authors: John W. Steeds

Abstract: An attempt is made, in the light of recent developments in the identification of intrinsic defects in 4H SiC, to account for differences...

413
Authors: Vito Raineri, Filippo Giannazzo, Fabrizio Roccaforte

Abstract: We describe the potential use of scanning probe microscopy (SPM) to image at nanoscale the charge transport in conductive layers, through...

417
Authors: Swapna G. Sunkari, Hrishikesh Das, Carl Hoff, Yaroslav Koshka, Janna R. B. Casady, Jeff B. Casady

Abstract: 4H Silicon Carbide (4H-SiC) has a great potential for low-loss power devices due to its superior electrical properties. However, the...

423
Authors: Shaweta Khanna, Arti Noor, Man Singh Tyagi, Sonnathi Neeleshwar

Abstract: Available data on Schottky barrier heights on silicon and carbon rich faces of 4H-SiC have been carefully analyzed to investigate the...

427
Authors: Pavel A. Ivanov, Alexander S. Potapov, Tat'yana P. Samsonova

Abstract: Forward current-voltage characteristics of non-ideal Ti / 4H-SiC Schottky barriers with ideality factor n = 1.1 - 1.2 have been analyzed....

431
Authors: Yoosuf N. Picard, Christopher Locke, Christopher L. Frewin, Mark E. Twigg, Stephen E. Saddow

Abstract: Electron channeling contrast imaging (ECCI) has been utilized to evaluate the surface morphology and crystalline quality of 3C-SiC films...

435
Authors: Sergey Y. Davydov, Alexander A. Lebedev

Abstract: The three-layer heterostructure formed by the two domains of the cubical 3C-SiC polytype and hexagonal NH-SiC (N = 4, 6, 8) layer is...

439
Authors: Owen J. Guy, Amador Pérez-Tomás, Michael R. Jennings, Michal Lodzinski, A. Castaing, Philip A. Mawby, James A. Covington, S.P. Wilks, R. Hammond, D. Connolly, S. Jones, J. Hopkins, T. Wilby, N. Rimmer, K. Baker, S. Conway, S. Evans

Abstract: This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low...

443

Showing 101 to 110 of 247 Paper Titles