Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Stéphane Morata, Frank Torregrosa, Thierry Bouchet

Abstract: This paper presents a new simple hand using and fast simulator for ion implantation in 4H-SiC substrates developed by IBS for ESCAPEE...

Authors: A.V. Bolotnikov, Peter G. Muzykov, Anant K. Agarwal, Qing Chun Jon Zhang, Tangali S. Sudarshan

Abstract: In this work the analysis of thermal diffusion of boron carried out from vapor phase was performed. Two-branch diffusion associated with...

Authors: Filippo Giannazzo, Martin Rambach, Dario Salinas, Fabrizio Roccaforte, Vito Raineri

Abstract: We studied the evolution of the electrical activation with annealing temperature and time in 4H-SiC implanted with Al ions at room...

Authors: Alain Declémy, Cyril Dupeyrat, Lionel Thomé, Aurelien Debelle

Abstract: Silicon carbide (SiC) could be a good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on...

Authors: Hervé Peyre, Jörg Pezoldt, M. Voelskow, Wolfgang Skorupa, Jean Camassel

Abstract: A detailed investigation of the Ge concentration in implanted samples has been carried out by SIMS and the effects affecting the depth...

Authors: Filippo Fabbri, Francesco Moscatelli, Antonella Poggi, Roberta Nipoti, Anna Cavallini

Abstract: Capacitance versus Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+n diodes with Al+ implanted...

Authors: Evgenia V. Kalinina, M.V. Zamoryanskaya, E.V. Kolesnikova, Alexander A. Lebedev

Abstract: Structural features of 4H-SiC structures with CVD epitaxial layers, subjected to high-dose Al ion implantation and short high-temperature...

Authors: Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda

Abstract: Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray...

Authors: Takeshi Mitani, Ryo Hattori, Masanobu Yoshikawa

Abstract: Depth profiles of ion-implantation induced defect centers have been investigated by cross-sectional CL measurements in the energy range from...

Authors: Masataka Satoh, Takeshi Jinushi, Tohru Nakamura

Abstract: We investigate the structural and electrical properties of polycrystalline 3C-SiC obtained from P ion implanted 4H-SiC with the box-shaped...


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