Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto

Abstract: The authors have investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by N+, P+, Al+ implantation,...

Authors: Ioana Pintilie, Lars S. Løvlie, K. Irmscher, Günter Wagner, Bengt Gunnar Svensson, Bernd Thomas

Abstract: Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by deep level transient spectroscopy...

Authors: Franziska Christine Beyer, Henrik Pedersen, Anne Henry, Erik Janzén

Abstract: Chloride-based 4H-SiC epitaxial layers were investigated by DLTS, MCTS and PL. The DLTS spectra of the as grown samples showed dominance of...

Authors: Nguyen Tien Son, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Adam Gali, Erik Janzén

Abstract: Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A...

Authors: Masashi Kato, Kosuke Kito, Masaya Ichimura

Abstract: We measured the temperature dependence of the electrical resistivity for two high-purity undoped 6H-SiC bulk wafers with resistivities of...

Authors: Hideharu Matsuura, Miyuki Takahashi, Yoshitaka Kagawa, Shoichi Tano, Takayuki Miyake

Abstract: To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy...

Authors: Giovanni Alfieri, Tsunenobu Kimoto

Abstract: As-grown and 116 keV electron-irradiated n-type 3C and 4H-SiC epilayers were electrically characterized by means of Fourier-transform deep...

Authors: Bernd Zippelius, Michael Krieger, Heiko B. Weber, Gerhard Pensl, Birgit Kallinger, Jochen Friedrich, Bernd Thomas

Abstract: 4H-SiC epilayers are homoepitaxially grown on 4H-SiC substrates with different C/Si-ratios and different growth rates by the chemical vapour...

Authors: Gaetano Izzo, Grazia Litrico, Andrea Severino, Gaetano Foti, Francesco La Via, Lucia Calcagno

Abstract: The defects produced by 7.0 MeV C+ irradiation in 4H-SiC epitaxial layer were followed by Deep Level Transient Spectroscopy, current-voltage...

Authors: Patrick Carlsson, Nguyen Tien Son, Henrik Pedersen, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén

Abstract: Photoexcitation electron paramagnetic resonance (photo-EPR) was used to determine deep levels related to the carbon vacancy (VC) in 4H-SiC....


Showing 91 to 100 of 247 Paper Titles