Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Charles R. Eddy, Ping Wu, Ilya Zwieback, Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Andrew E. Souzis, D. Kurt Gaskill

Abstract: Knoop microhardness assessments were conducted on a variety of 6H- and 4H-SiC substrates to assess any appreciable differences that may need...

Authors: Mariana A. Fraga, M. Massi, I.C. Oliveira, N.C. Cruz, S.G. Dos Santos Filho

Abstract: Amorphous SiCxNy films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon...

Authors: Alkyoni Mantzari, Christos B. Lioutas, Efstathios K. Polychroniadis

Abstract: The aim of the present work is to study the evolution and the annihilation of inversion domain boundaries in 3C-SiC during growth. For this...

Authors: Alexander A. Lebedev, Pavel L. Abramov, Nina V. Agrinskaya, Ven I. Kozub, Alexey N. Kuznetsov, Sergey P. Lebedev, Gagik A. Oganesyan, A.V. Chernyaev, Dmitrii Shamshur, Maria O. Skvortsova

Abstract: n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and...

Authors: Teddy Robert, Sandrine Juillaguet, Maya Marinova, Thierry Chassagne, Ioannis Tsiaousis, N. Frangis, Efstathios K. Polychroniadis, Jean Camassel

Abstract: The electronic structure of in-grown 8H stacking faults in 4H-SiC matrix has been investigated in detail. After assessment of the structural...

Authors: D.V. Savchenko, Andreas Pöppl, Ekaterina N. Kalabukhova, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, Uwe Gerstmann

Abstract: EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h)...

Authors: Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Nguyen Tien Son

Abstract: A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the...

Authors: Junichi Isoya, T. Umeda, N. Mizuochi, Takeshi Ohshima

Abstract: The Tv2a center in 4H-SiC irradiated by electrons at room temperature has been studied by pulsed EPR. Various techniques such as pulsed...

Authors: Uwe Gerstmann, A.P. Seitsonen, Francesco Mauri, Hans Jürgen von Bardeleben

Abstract: In this work we elucidate the microscopic origin of the dominant radiation induced I-II spectra in p-type doped 4H-SiC. By calculating the...

Authors: Adam Gali, T. Umeda, Erik Janzén, Norio Morishita, Takeshi Ohshima, Junichi Isoya

Abstract: We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron irradiated n-type 4H-SiC by means of...


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