Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski

Abstract: The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...

Authors: Nicolas Camara, Jean Roch Huntzinger, Antoine Tiberj, G. Rius, B. Jouault, Francesco Pérez-Murano, Narcis Mestres, Phillippe Godignon, Jean Camassel

Abstract: We report a comparative investigation of few layers graphene grown on 6H, 4H and 3C-SiC substrates. We show that the size of the graphitic...

Authors: Jolanta Borysiuk, Wlodek Strupiński, Rafał Bożek, Andrzej Wysmolek, Jacek M. Baranowski

Abstract: Transmission Electron Microscopy (TEM) investigations of graphene layers on Si terminated 4H-SiC(0001) are presented. The graphene layers...

Authors: Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R. Eddy, Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell, J.M. McCrate, S.A. Kitt, D. Kurt Gaskill

Abstract: Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under...

Authors: Antoine Tiberj, Marta Martin, Nicolas Camara, P. Poncharal, T. Michel, J.L. Sauvajol, Phillippe Godignon, Jean Camassel

Abstract: We report an investigation of few layers graphene exfoliated on SiC. Using AFM and Raman spectroscopy, we find that the graphene thickness...

Authors: Christian Riedl, Ulrich Starke

Abstract: The structural and electronic properties of epitaxial graphene on SiC(0001) are investigated by low energy electron diffraction (LEED) and...

Authors: A. Castaing, Owen J. Guy, Michal Lodzinski, S.P. Wilks

Abstract: This paper reports the investigation of epitaxial graphene growth on 4H-SiC substrates. Growth has been performed under ultra high vacuum...

Authors: Jörg Pezoldt

Abstract: Carbon is able to crystallise in different allotrope modifications. They mainly differ in the dominating bindings formed in dependence on...

Authors: Micaela Castellino, Stefano Bianco, Denis Perrone, Simone Musso, Mauro Giorcelli, Gabriele Maccioni, Sergio Ferrero, Luciano Scaltrito, Alberto Tagliaferro

Abstract: Vertically aligned multiwall carbon nanotubes were directly grown by means of thermal Chemical Vapor Deposition onto epitaxial and bulk...

Authors: Konstantinos Rogdakis, Seoung Yong Lee, Dong Joo Kim, Sang Kwon Lee, Edwige Bano, Konstantinos Zekentes

Abstract: In this work, SiC nanowire (NW) FETs are prepared and their electrical measurements are presented. From the samples fabricated on the same...


Showing 51 to 60 of 247 Paper Titles