Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Bernd Thomas, Christian Hecht, Birgit Kallinger

Abstract: In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a commercially available...

Authors: Anne Henry, Stefano Leone, Henrik Pedersen, Olof Kordina, Erik Janzén

Abstract: CVD growth of epitaxial layers with a mirror like surface grown on 75 mm diameter 4° off-axis 4H SiC substrates is demonstrated. The effect...

Authors: Philip Hens, Mikael Syväjärvi, Felix Oehlschläger, Peter J. Wellmann, Rositza Yakimova

Abstract: The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned...

Authors: Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, A. Lundskog, Erik Janzén

Abstract: Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard...

Authors: Stefano Leone, Henrik Pedersen, Anne Henry, Shailaja P. Rao, Olof Kordina, Erik Janzén

Abstract: Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this...

Authors: Siva Prasad Kotamraju, Galyna Melnychuk, Yaroslav Koshka

Abstract: Chlorinated silicon precursor SiCl4 was investigated as a source of additional chlorine instead of or in combination with HCl during the low...

Authors: James D. Oliver, Brian H. Ponczak, Rinku P. Parikh, Raymond A. Adomaitis

Abstract: A method to improve the uniformity of epitaxial wafers grown in planetary rotation reactors through analysis of intentionally stalled wafer...

Authors: Rachael L. Myers-Ward, Brenda L. VanMil, Robert E. Stahlbush, S.L. Katz, J.M. McCrate, S.A. Kitt, Charles R. Eddy, D. Kurt Gaskill

Abstract: Epitaxial layers were grown on 4° off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in...

Authors: Ning Zhang, Yi Chen, Edward K. Sanchez, David R. Black, Michael Dudley

Abstract: The influence of substrate surface scratches on the quality of CVD grown 4H-SiC homo-epitaxial layers has been studied using a combination...

Authors: Kazutoshi Kojima, Hajime Okumura, Kazuo Arai

Abstract: We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of...


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