Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Kazuaki Seki, Ryo Tanaka, Toru Ujihara, Yoshikazu Takeda

Abstract: We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed...

Authors: Didier Chaussende, Jessica Eid, Frédéric Mercier, Roland Madar, Michel Pons

Abstract: The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable...

Authors: Ryo Tanaka, Kazuaki Seki, Toru Ujihara, Yoshikazu Takeda

Abstract: Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700°C. The seed...

Authors: Frédéric Mercier, Didier Chaussende, Jean Marc Dedulle, Michel Pons, Roland Madar

Abstract: The main problem for the development of 3C-SiC electronics is the lack of an adapted bulk growth process. The seeded sublimation method is...

Authors: Jessica Eid, Irina G. Galben-Sandulache, Georgios Zoulis, Teddy Robert, Didier Chaussende, Sandrine Juillaguet, Antoine Tiberj, Jean Camassel

Abstract: We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed...

Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel

Abstract: We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role...

Authors: Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa

Abstract: The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h by chlorine addition. The epitaxial layers grown with this process...

Authors: Brenda L. VanMil, Robert E. Stahlbush, Rachael L. Myers-Ward, Yoosuf N. Picard, S.A. Kitt, J.M. McCrate, S.L. Katz, D. Kurt Gaskill, Charles R. Eddy

Abstract: Conversion of basal plane dislocations (BPD) to threading edge dislocations (TED) in 8° off-cut 4H-SiC within an n+ buffer layer would...

Authors: Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano

Abstract: The transfer and generation of extended defects in 4H-SiC epitaxial growth at a high growth rate are examined. An epilayer with virtually no...

Authors: Massimo Camarda, Antonino La Magna, Francesco La Via

Abstract: Using joined super-lattice Kinetic Monte Carlo simulations, continuous modelling and recent experimental data on the homoepitaxial growth of...


Showing 11 to 20 of 247 Paper Titles