Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

Abstract:

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The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable growth process. In this paper, we will address those two issues by reviewing the most recent results in the field. Nucleation, growth, structural quality and doping results will be presented. New insights on 3C bulk growth will be discussed with respect to a future development of real bulk 3C-SiC ingots.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

31-36

DOI:

10.4028/www.scientific.net/MSF.615-617.31

Citation:

D. Chaussende et al., "Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase", Materials Science Forum, Vols. 615-617, pp. 31-36, 2009

Online since:

March 2009

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Price:

$35.00

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