Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

Didier Chaussende; Jessica Eid; Frédéric Mercier; Roland Madar; Michel Pons

doi:10.4028/www.scientific.net/MSF.615-617.31

Paper Titles

Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
p.15

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
p.19

In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
p.23

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
p.27

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
p.31

High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
p.37

Top Seeded Solution Growth of 3C-SiC Single Crystals
p.41

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
p.45

Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
p.49

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Nucleation and Growth of 3C-SiC Single Crystals...

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

Abstract:

The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable growth process. In this paper, we will address those two issues by reviewing the most recent results in the field. Nucleation, growth, structural quality and doping results will be presented. New insights on 3C bulk growth will be discussed with respect to a future development of real bulk 3C-SiC ingots.