Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Abstract:

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We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the structural defects, like stacking faults and dislocations. The effect of changing the nitrogen flow rate on the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

45-48

DOI:

10.4028/www.scientific.net/MSF.615-617.45

Citation:

J. Eid et al., "Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT", Materials Science Forum, Vols. 615-617, pp. 45-48, 2009

Online since:

March 2009

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Price:

$35.00

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