Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Jessica Eid; Irina G. Galben-Sandulache; Georgios Zoulis; Teddy Robert; Didier Chaussende; Sandrine Juillaguet; Antoine Tiberj; Jean Camassel

doi:10.4028/www.scientific.net/MSF.615-617.45

Paper Titles

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
p.27

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
p.31

High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
p.37

Top Seeded Solution Growth of 3C-SiC Single Crystals
p.41

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
p.45

Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
p.49

Thick Epitaxial Layers Growth by Chlorine Addition
p.55

Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
p.61

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
p.67

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Nitrogen Doping of 3C-SiC Single Crystals Grown by...

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Abstract:

We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the structural defects, like stacking faults and dislocations. The effect of changing the nitrogen flow rate on the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.