Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed crystals. In spite of the use of 3C-SiC seed crystals, the polytype of the grown crystal changed from 3C-SiC to 6H-SiC, because the stacking errors easily occur due to the similarity of the (111) face of 3C-SiC and the (0001) face of 6H-SiC. Moreover, the grown 6H-SiC crystal affected the crystal quality of the seed crystal, i.e., high-density stacking faults were induced in the seed crystal after the growth process.
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
K. Seki et al., "Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method ", Materials Science Forum, Vols. 615-617, pp. 27-30, 2009