Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method

Kazuaki Seki; Ryo Tanaka; Toru Ujihara; Yoshikazu Takeda

doi:10.4028/www.scientific.net/MSF.615-617.27

Paper Titles

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
p.11

Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
p.15

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
p.19

In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
p.23

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
p.27

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
p.31

High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
p.37

Top Seeded Solution Growth of 3C-SiC Single Crystals
p.41

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
p.45

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Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method

Abstract:

We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed crystals. In spite of the use of 3C-SiC seed crystals, the polytype of the grown crystal changed from 3C-SiC to 6H-SiC, because the stacking errors easily occur due to the similarity of the (111) face of 3C-SiC and the (0001) face of 6H-SiC. Moreover, the grown 6H-SiC crystal affected the crystal quality of the seed crystal, i.e., high-density stacking faults were induced in the seed crystal after the growth process.