Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside

Abstract:

Article Preview

n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been studied. An open or closed seed backside during the growth processes have been applied. In the former, a distinct decrease backside etching of the seed was observed. Crystals have been extensively characterized with respect to their purity, quality and electrical properties using complex experimental methods. For the n-type boule an axially and radially homogeneous resistivity ~0.11 cm at 300 K was observed. Electrical properties of the p-type crystal, i.e., high room-temperature resistivity of 239 cm, were affected by compensation effects between residual donors (nitrogen and oxygen) and acceptors (mainly boron).

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

19-22

DOI:

10.4028/www.scientific.net/MSF.615-617.19

Citation:

K. Racka et al., "Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside", Materials Science Forum, Vols. 615-617, pp. 19-22, 2009

Online since:

March 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.