Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside

Katarzyna Racka; Emil Tymicki; Marcin Raczkiewicz; Krzysztof Grasza; Michal Kozubal; Elzbieta Jurkiewicz-Wegner; Rafał Jakieła; Andrzej Brzozowski; Mariusz Pawłowski; Miroslaw Piersa; J. Sadło; Jerzy Krupka

doi:10.4028/www.scientific.net/MSF.615-617.19

Paper Titles

Defect Status in SiC Manufacturing
p.3

Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
p.7

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
p.11

Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
p.15

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
p.19

In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
p.23

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
p.27

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
p.31

High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
p.37

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Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside

Abstract:

n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been studied. An open or closed seed backside during the growth processes have been applied. In the former, a distinct decrease backside etching of the seed was observed. Crystals have been extensively characterized with respect to their purity, quality and electrical properties using complex experimental methods. For the n-type boule an axially and radially homogeneous resistivity ~0.11 cm at 300 K was observed. Electrical properties of the p-type crystal, i.e., high room-temperature resistivity of 239 cm, were affected by compensation effects between residual donors (nitrogen and oxygen) and acceptors (mainly boron).