High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers

Ryo Tanaka; Kazuaki Seki; Toru Ujihara; Yoshikazu Takeda

doi:10.4028/www.scientific.net/MSF.615-617.37

Paper Titles

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
p.19

In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
p.23

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
p.27

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
p.31

High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
p.37

Top Seeded Solution Growth of 3C-SiC Single Crystals
p.41

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
p.45

Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
p.49

Thick Epitaxial Layers Growth by Chlorine Addition
p.55

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High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers

Abstract:

Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700°C. The seed crystal was prepared by a CVD method on the undulated Si substrate. 3C-SiC stably grew on the (001) seed crystal. However, dark stripes from the seed crystal to the grown crystal along {111} planes were clearly observed. The stripes were due to the high-density stacking faults extended from the stacking faults in the 3C-SiC epilayer that were induced during the CVD growth on Si substrate.