In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction

Peter J. Wellmann; Katja Konias; Philip Hens; Rainer Hock; Andreas Magerl

doi:10.4028/www.scientific.net/MSF.615-617.23

Paper Titles

Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
p.7

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
p.11

Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
p.15

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
p.19

In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
p.23

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
p.27

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
p.31

High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
p.37

Top Seeded Solution Growth of 3C-SiC Single Crystals
p.41

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In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction

Abstract:

This work reports on the in-situ observation of a polytype switch during physical vapor transport (PVT) growth of bulk SiC crystals by x-ray diffraction. A standard PVT reactor for 2” and 3” bulk growth was set up in a high-energy x-ray diffraction lab. Due to the high penetration depth of the high-energy x-ray beam no modification of the PVT reactor was necessary in order to measure Laue diffraction patterns of the growing crystal with good signal to noise ratio. We report for the first time upon the in-situ observation of polytype switching during SiC bulk PVT growth.