Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

Philip Hens; Ulrike Künecke; Katja Konias; Rainer Hock; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.615-617.11

Paper Titles

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Overview

Defect Status in SiC Manufacturing
p.3

Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
p.7

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
p.11

Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
p.15

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
p.19

In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
p.23

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
p.27

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Germanium Incorporation during PVT Bulk Growth of...

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

Abstract:

Silicon carbide as a material for electronic devices still has substantial problems concerning its structural quality and defects. It has been shown that dopants can have a big influence on structural properties like polytype stability and dislocation statistics [1]. We will discuss the effect of an isoelectronic dopant in silicon carbide. Germanium, being a member of the 4th group in the periodic table of elements like silicon and carbon, will not influence the electrical properties of the material such as e.g. aluminum. In our experiments we reached concentrations of up to 1*1020 cm-3. We have observed an impact on the polytype stability during sublimation growth with in-situ germanium incorporation. We investigated an influence on the dislocation statistics during growth and, hence, varying germanium concentration. We found only a slight decrease in mobility during Hall measurements but no severe changes in electrical properties of the material.