Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

Abstract:

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Silicon carbide as a material for electronic devices still has substantial problems concerning its structural quality and defects. It has been shown that dopants can have a big influence on structural properties like polytype stability and dislocation statistics [1]. We will discuss the effect of an isoelectronic dopant in silicon carbide. Germanium, being a member of the 4th group in the periodic table of elements like silicon and carbon, will not influence the electrical properties of the material such as e.g. aluminum. In our experiments we reached concentrations of up to 1*1020 cm-3. We have observed an impact on the polytype stability during sublimation growth with in-situ germanium incorporation. We investigated an influence on the dislocation statistics during growth and, hence, varying germanium concentration. We found only a slight decrease in mobility during Hall measurements but no severe changes in electrical properties of the material.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

11-14

DOI:

10.4028/www.scientific.net/MSF.615-617.11

Citation:

P. Hens et al., "Germanium Incorporation during PVT Bulk Growth of Silicon Carbide", Materials Science Forum, Vols. 615-617, pp. 11-14, 2009

Online since:

March 2009

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Price:

$35.00

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