Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: Massimo Camarda, Antonino La Magna, Andrea Severino, Francesco La Via

Abstract: We discuss the possible source of surface instabilities (with specific reference to the step bunching phenomena) during the growth of cubic...

Authors: Hrishikesh Das, Galyna Melnychuk, Yaroslav Koshka

Abstract: Dislocations were investigated in the halo-carbon low-temperature epitaxial growth and low-temperature selective epitaxial growth (LTSEG)...

Authors: Amitesh Shrivastava, Peter G. Muzykov, Tangali S. Sudarshan

Abstract: In this work we identified the nucleation sites of inverted pyramid defects in 4H-SiC epilayers using AFM and KOH etching and proposed a...

Authors: Ryo Hattori, R. Shimizu, I. Chiba, K. Hamano, Tatsuo Oomori

Abstract: Two types of in-grown stacking faults in 4H-SiC epitaxial layers (SFs) were investigated using a new photoluminescence (PL) topographic...

Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Pierre Brosselard, Phillippe Godignon, Erik Janzén

Abstract: Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates. Special attention was paid to the surface...

Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Ryo Hattori

Abstract: We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype...

Authors: Ryo Hattori, Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro, S. Shimosaki

Abstract: LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen...

Authors: Christopher Locke, Ruggero Anzalone, Andrea Severino, Corrado Bongiorno, Grazia Litrico, Francesco La Via, Stephen E. Saddow

Abstract: We have developed a high-quality growth process for 3C-SiC on on-axis (111)Si substrates with the ultimate goal to demonstrate high quality...

Authors: Andrea Severino, Ruggero Anzalone, Corrado Bongiorno, M. Italia, Giuseppe Abbondanza, Massimo Camarda, L.M.S. Perdicaro, Giuseppe Condorelli, Marco Mauceri, Francesco La Via

Abstract: The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the...

Authors: Giovanni Attolini, Bernard Enrico Watts, Matteo Bosi, Francesca Rossi, Ferenc Riesz

Abstract: A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the...


Showing 31 to 40 of 247 Paper Titles