Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/

Paper Title Page

Authors: N. Kwietniewski, Krystyna Gołaszewska, T.T. Piotrowski, W. Rzodkiewicz, Tomasz Gutt, M. Sochacki, Jan Szmidt, Anna Piotrowska

Abstract: The kinetics of 4H-SiC thermal oxidation by RTP technique and the properties of thin thermal oxide was reported. The thickness of the...

Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Bengt Gunnar Svensson

Abstract: This work is focusing on the effect of a high concentration of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface in...

Authors: Fredrik Allerstam, Einar Ö. Sveinbjörnsson

Abstract: In this work the effect of oxidation temperature of 4H-SiC on the density of near-interface traps is studied. It is seen that the portion of...

Authors: Takuji Hosoi, Makoto Harada, Yusuke Kagei, Yuu Watanabe, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe

Abstract: We propose the use of an aluminum oxynitride (AlON) gate insulator for 4H-SiC MIS devices. Since direct deposition of AlON on 4H-SiC...

Authors: Chee Chung Hoong, Kuan Yew Cheong

Abstract: The effects of post deposition annealing in forming gas (5 % H2 in 95 % N2) ambient at different temperatures (850, 950, and 1050 oC) on...

Authors: Shinsuke Harada, Makoto Kato, Sachiko Ito, Kenji Suzuki, Takasumi Ohyanagi, Junji Senzaki, Kenji Fukuda, Hajime Okumura, Kazuo Arai

Abstract: Reliability of the gate oxide is influenced by the device structure and the processes. In the SiC MOSFET, the surface morphology is degraded...

Authors: Tetsuo Hatakeyama, Hiroshi Kono, Takuma Suzuki, Junji Senzaki, Kenji Fukuda, Takashi Shinohe, Kazuo Arai

Abstract: This paper discusses the issues regarding reliability of large-area (up to 9mm2) gate oxide on the C-face of 4H-SiC. We first show that the...

Authors: Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama, Kenji Fukuda, Takashi Shinohe, Kazuo Arai

Abstract: The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was...

Authors: Satoshi Tanimoto, Hiromichi Oohashi

Abstract: One major problem when operating SiC power devices at a junction temperature of more than 200°C is the pronounced degradation of the...

Authors: Alexander A. Lebedev, A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, Raisa V. Konakova, Ya.Ya. Kudryk, Victor V. Milenin, V.N. Sheremet

Abstract: We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the...


Showing 131 to 140 of 247 Paper Titles