Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face

Shinsuke Harada; Makoto Kato; Sachiko Ito; Kenji Suzuki; Takasumi Ohyanagi; Junji Senzaki; Kenji Fukuda; Hajime Okumura; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.615-617.549

Paper Titles

Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
p.533

Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC
p.537

AlON/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices
p.541

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO₂ on 4H-SiC
p.545

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
p.549

Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
p.553

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation
p.557

High-Temperature Reliable Ni₂Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier
p.561

Heat-Resistant Barrier Contacts Made on the Basis of TiB_x and ZrB_x to SiC and GaN
p.565

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Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face

Abstract:

Reliability of the gate oxide is influenced by the device structure and the processes. In the SiC MOSFET, the surface morphology is degraded by the high temperature activation RTA, and the degradation is remarkable on the n+ source region. This study develops the method to suppress the degradation of the reliability of the gate oxide on the carbon face. By utilizing the carbon cap for the RTA and the high density O2 plasma etching to remove the carbon cap, the reliability is drastically improved both on the un-implanted and the implanted surfaces. Especially, the degradation of the reliability is perfectly suppressed on the un-implanted surface.