Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

Tetsuo Hatakeyama; Hiroshi Kono; Takuma Suzuki; Junji Senzaki; Kenji Fukuda; Takashi Shinohe; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.615-617.553

Paper Titles

Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC
p.537

AlON/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices
p.541

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO₂ on 4H-SiC
p.545

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
p.549

Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
p.553

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation
p.557

High-Temperature Reliable Ni₂Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier
p.561

Heat-Resistant Barrier Contacts Made on the Basis of TiB_x and ZrB_x to SiC and GaN
p.565

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC
p.569

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Reliability of Large-Area Gate Oxide on the C-Face...

Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

Abstract:

This paper discusses the issues regarding reliability of large-area (up to 9mm2) gate oxide on the C-face of 4H-SiC. We first show that the initial failure in TDDB characteristics of large area gate oxide is strongly correlated with the surface-defect density. Using wafers with low surface-defect density wafers, scaling analysis of the area-dependence of TDDB characteristics has been performed. It has shown that the reliability of a large area gate oxide is dominated by initial and random failures. Further, we have shown that, by optimizing the temperatures of post-oxidation anneal in hydrogen atmosphere, the random failures of TDDB characteristics are substantially reduced.