Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

Abstract:

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This paper discusses the issues regarding reliability of large-area (up to 9mm2) gate oxide on the C-face of 4H-SiC. We first show that the initial failure in TDDB characteristics of large area gate oxide is strongly correlated with the surface-defect density. Using wafers with low surface-defect density wafers, scaling analysis of the area-dependence of TDDB characteristics has been performed. It has shown that the reliability of a large area gate oxide is dominated by initial and random failures. Further, we have shown that, by optimizing the temperatures of post-oxidation anneal in hydrogen atmosphere, the random failures of TDDB characteristics are substantially reduced.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

553-556

DOI:

10.4028/www.scientific.net/MSF.615-617.553

Citation:

T. Hatakeyama et al., "Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 553-556, 2009

Online since:

March 2009

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Price:

$35.00

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