Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

Alexander A. Lebedev; A.E. Belyaev; N.S. Boltovets; V.N. Ivanov; Raisa V. Konakova; Ya.Ya. Kudryk; Victor V. Milenin; V.N. Sheremet

doi:10.4028/www.scientific.net/MSF.615-617.565

Paper Titles

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
p.549

Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC
p.553

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation
p.557

High-Temperature Reliable Ni₂Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier
p.561

Heat-Resistant Barrier Contacts Made on the Basis of TiB_x and ZrB_x to SiC and GaN
p.565

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC
p.569

On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC
p.573

Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC
p.577

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC
p.581

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Heat-Resistant Barrier Contacts Made on the Basis of TiB_x and ZrB_x to SiC and GaN

Abstract:

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.