On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC

Andrian V. Kuchuk; V.P. Kladko; Anna Piotrowska; Renata Ratajczak; Rafał Jakieła

doi:10.4028/www.scientific.net/MSF.615-617.573

Paper Titles

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation
p.557

High-Temperature Reliable Ni₂Si-Based Contacts on SiC Connected to Si-Doped Al Interconnect via Ta/TaN Barrier
p.561

Heat-Resistant Barrier Contacts Made on the Basis of TiB_x and ZrB_x to SiC and GaN
p.565

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC
p.569

On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC
p.573

Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC
p.577

Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC
p.581

Process Optimization for High Temperature SiC Lateral Devices
p.585

A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations
p.589

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On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC

Abstract:

In this study, the formation of Ni, Ni-rich Ni2Si and Si-rich NiSi2 ohmic contacts to n-type 4H-SiC are investigated. The Ni/n-SiC ohmic contact with resistance rc ~ 4.2×10-4 Ω cm2 is formed after annealing at 1050oC. For Ni2Si/n-SiC, the contact resistances were rc ~ 4×10-4 Ωcm2 and rc ~ 3.5×10-4 Ωcm2 after annealing at 1000 and 1050oC, respectively. The non-ohmic I-V characteristics are observed for NiSi2/n-SiC contact even after annealing at 1050oC. The features of ohmic contact formation for Ni-based metallization to 4H n-SiC are discussed.