On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC

Abstract:

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In this study, the formation of Ni, Ni-rich Ni2Si and Si-rich NiSi2 ohmic contacts to n-type 4H-SiC are investigated. The Ni/n-SiC ohmic contact with resistance rc ~ 4.2×10-4 Ω cm2 is formed after annealing at 1050oC. For Ni2Si/n-SiC, the contact resistances were rc ~ 4×10-4 Ωcm2 and rc ~ 3.5×10-4 Ωcm2 after annealing at 1000 and 1050oC, respectively. The non-ohmic I-V characteristics are observed for NiSi2/n-SiC contact even after annealing at 1050oC. The features of ohmic contact formation for Ni-based metallization to 4H n-SiC are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 615-617)

Edited by:

Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard

Pages:

573-576

DOI:

10.4028/www.scientific.net/MSF.615-617.573

Citation:

A. V. Kuchuk et al., "On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 573-576, 2009

Online since:

March 2009

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Price:

$35.00

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